Radiation tolerance of single-sided silicon microstrips
نویسندگان
چکیده
منابع مشابه
Perfect Single-Sided Radiation and Absorption without Mirrors
Hengyun Zhou, Bo Zhen, 3, ∗ Chia Wei Hsu, Owen D. Miller, Steven G. Johnson, John D. Joannopoulos, 2 and Marin Soljačić 2 Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA Research Lab of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA Physics Department and Solid State Institute, Technion, Haifa 32000, Isra...
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1Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA 2Research Lab of Electronics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA 3Physics Department and Solid State Institute, Technion, Haifa 32000, Israel 4Department of Applied Physics, Yale University, New Haven, Connec...
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We started TCAD simulations last year to understand the radiation damage in Double Sided Silicon Strip Detectors (DSSD) for the CBM Silicon Tracking System. We used the public domain versions from Stanford namely SUPREM for Process Simulation and PISCES for device simulation [1]. The results were reported in the GSI Scientific Report 2008 [2]. Now we are using the three-dimensional TCAD simulat...
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ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
سال: 1994
ISSN: 0168-9002
DOI: 10.1016/0168-9002(94)90188-0